Electronics Engineering

Electronics EngineeringAnalog CircuitsMultiple Choice (MCQ)1 Mark
Q10.

In the circuit below, assume that the long channel NMOS transistor is biased in saturation. The small signal trans-conductance of the transistor is gmg_m. Neglect body effect, channel length modulation and intrinsic device capacitances. The small signal input impedance Zin(jω)Z_{in}(j\omega) is _______.

image

A
gmC1CLω2+1jωC1+1jωCL\frac{-g_m}{C_1 C_L \omega^2} + \frac{1}{j\omega C_1} + \frac{1}{j\omega C_L}
B
gmC1CLω2+1jωC1+1jωCL\frac{g_m}{C_1 C_L \omega^2} + \frac{1}{j\omega C_1} + \frac{1}{j\omega C_L}
C
1jωC1+1jωCL\frac{1}{j\omega C_1} + \frac{1}{j\omega C_L}
D
gmC1CLω2+1jωC1+jωCL\frac{-g_m}{C_1 C_L \omega^2} + \frac{1}{j\omega C_1 + j\omega C_L}