The intrinsic carrier concentration of a semiconductor is $2.5 \times 10^{16}\ /\text{m}^3$ at $300\ \text{K}$. If the electron and hole mobilities are $0.15\ \text{m}^2/\text{Vs}$ and $0.05\ \text{m}^2/\text{Vs}$, respectively, then the intrinsic resistivity of the semiconductor (in $\text{k}\Omega\!\cdot\!\text{m}$) at $300\ \text{K}$ is . (Charge of an electron $e = 1.6 \times 10^{-19}\ \text{C}$)

The electron mobility $\mun$ in a non-degenerate germanium semiconductor at $300 \text{ K}$ is $0.38 \text{ m}^2/\text{Vs}$. The electron diffusivity $Dn$ at $300 \text{ K}$ (in $\text{cm}^2/\text{s}$, rounded off to the nearest integer) is \\\\\\. (Consider the Boltzmann constant $kB = 1.38 \times 10^{-23} \text{ J/K}$ and the charge of an electron $e = 1.6 \times 10^{-19} \text{ C}$.)

Which of the following can be used as an n-type dopant for silicon? Select the correct option(s).

Consider a MOS capacitor made with p-type silicon. It has an oxide thickness of $100 \text{ nm}$, a fixed positive oxide charge of $10^{-8} \text{ C/cm}^2$ at the oxide-silicon interface, and a metal work function of $4.6 \text{ eV}$. Assume that the relative permittivity of the oxide is $4$ and the absolute permittivity of free space is $8.85 \times 10^{-14} \text{ F/cm}$. If the flatband voltage is $0 \text{ V}$, the work function of the p-type silicon (in $eV$, rounded off to two decimal places) is .

A non-degenerate n-type semiconductor has $5\%$ neutral dopant atoms. Its Fermi level is located at $0.25\text{ eV}$ below the conduction band ($EC$) and the donor energy level ($ED$) has a degeneracy of $2$. Assuming the thermal voltage to be $20\text{ mV}$, the difference between $EC$ and $ED$ (in $\text{eV}$, rounded off to two decimal places) is .

An NMOS transistor operating in the linear region has $I{DS}$ of $5 \mu\text{A}$ at $V{DS}$ of $0.1 \text{ V}$. Keeping $V{GS}$ constant, the $V{DS}$ is increased to $1.5 \text{ V}$. Given that $\mun C{ox} \frac{W}{L} = 50 \mu\text{A/V}^2$, the transconductance at the new operating point (in $\mu\text{A/V}$, rounded off to two decimal places) is .

The photocurrent of a PN junction diode solar cell is $1\text{ mA}$. The voltage corresponding to its maximum power point is $0.3\text{ V}$. If the thermal voltage is $30\text{ mV}$, the reverse saturation current of the diode (in $\text{nA}$, rounded off to two decimal places) is .

For non-degenerately doped n-type silicon, which one of the following plots represents the temperature ($T$) dependence of free electron concentration ($n$)?

Which of the following statements is/are true for a BJT with respect to its DC current gain $\beta$?